| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure of a semiconductor device like a high-breakdown-voltage hybrid transistor which has small parasitic resistance and large current driving capability. SOLUTION: A semiconductor layer 22 of a first conductivity type includes a base region 9 of the first conductivity type. An emitter region 10 of a second conductivity type is provided in the base region 9. In the semiconductor layer 22, an impurity layer 23 of the second conductivity type is provided adjacently to the base region 9 from a surface of the semiconductor layer 22 to a predetermined depth smaller than the thickness of the semiconductor layer 22. The impurity layer 23 is provided with a collector region 11 of the first conductivity type and a drain region 14 of the second conductivity type, apart from the region layer 9. On the surface of the semiconductor layer 22, a gate electrode 13 is provided on an end of the emitter region 10 and partially on the base region 9 and impurity layer 23, through the gate insulating film 12. The semiconductor device includes a first electrode 15 connected to the emitter region 10 and base region 9 in common, and a second electrode 16 connected to the collector region 11 and drain region 14 in common. COPYRIGHT: (C)2011,JPO&INPIT
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