| 摘要 |
PURPOSE: A method of programming a non volatile memory device is provided to reduce interference due to the threshold voltage difference adjacent cells by rearranging a threshold voltage to a data to be programmed in a memory cell. CONSTITUTION: In a method of programming a non volatile memory device, the program of the first logical page is performed. The program data of the second logical page is inputted to a first latch of a page buffer. The data programmed in the first logical page is stored in the second latch of the page buffer. The logical operation result of the data is stored in the third latch of the page buffer. Data of the first to the third latch is rearranged(S317). Rearranged data is programmed in the second logical page(S319). |
