| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device that allows variance in the characteristics thereof due to a difference in size of a source-drain region to be suppressed, and to provide a method of manufacturing the semiconductor device. <P>SOLUTION: Side walls 32a of, for example, 38 nm in width are disposed on both sides of a gate electrode 29a of a transistor A having a small source-drain region. Further, side walls 33b of, for example, 5 nm in width are disposed on both sides of a gate electrode 29b of a transistor B having a large source-drain region in addition to side walls 32b as wide as the side walls 32a. Consequently, excessive diffusion of impurities to below the gate electrodes due to a difference in sizes of the source-drain regions can be avoided during a heat treatment to obtain predetermined characteristics. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
