发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT AND RECEIVING APPARATUS
摘要 <p>Disclosed is a receiving apparatus, which is provided with: a first receiving circuit, which receives radio waves transmitted from a tuning circuit, said radio waves being in a first frequency band; a second receiving circuit, which includes a first amplifying section and receives radio waves in a second frequency band wherein the frequency is lower than that of the first frequency band; and a voltage generating means, which generates a tuning voltage to be supplied to the tuning circuit in a first selection state wherein the radio waves in the first frequency band are received, and generates a bias voltage to be supplied to the first amplifying section in a second selection state wherein the radio waves in the second frequency band are received. The voltage generating means has: a voltage generating section, which generates the tuning voltage and the bias voltage and outputs the voltages to an output path; and a switching circuit, which switches the output path to the first amplifying section side in the second selection state.</p>
申请公布号 WO2011030663(A1) 申请公布日期 2011.03.17
申请号 WO2010JP64256 申请日期 2010.08.24
申请人 MITSUMI ELECTRIC CO., LTD.;YASHIMA, KIMINORI 发明人 YASHIMA, KIMINORI
分类号 H04B1/26;H04B1/18 主分类号 H04B1/26
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