发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
The present invention proposes a method of forming a dual contact hole, comprising steps of: forming a source/drain region and a replacement gate structure on a semiconductor substrate, the replacement gate structure including a replacement gate; depositing a first inter-layer dielectric layer; planarizing the first inter-layer dielectric layer to expose the replacement gate in the replacement gate structure; removing the replacement gate and depositing to form a metal gate; etching to form a first source/drain contact opening in the first inter-layer dielectric layer; sequentially depositing a liner and filling conductive metal in the first source/drain contact opening to form a first source/drain contact hole; depositing a second inter-layer dielectric layer on the first inter-layer dielectric layer; etching to form a second source/drain contact opening and a gate contact opening in the second inter-layer dielectric layer; and sequentially depositing a liner and filling conductive metal in the second source/drain contact opening and the gate contact opening to form a second source/drain contact hole and a gate contact hole. The present invention also proposes a semiconductor device manufactured by the above process.
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申请公布号 |
US2011062502(A1) |
申请公布日期 |
2011.03.17 |
申请号 |
US20100841406 |
申请日期 |
2010.07.22 |
申请人 |
THE INSTITUTE OF MICROELECTRONICS CHINESE ACADEMYOF SCIENCE |
发明人 |
YIN HAIZHOU;ZHU HUILONG;LUO ZHIJIONG |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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