发明名称 Quantum well thermoelectric module
摘要 Quantum well thermoelectric modules and a low-cost method of mass producing the modules. The devices are comprised of n-legs and p-legs, each leg being comprised of layers of quantum well material in the form of very thin alternating layers. In the n-legs the alternating layers are layers of n-type semiconductor material and electrical insulating material. In the p-legs the alternating layers are layers of p-type semiconductor material and electrical insulating material. Both n-legs and p-legs are comprised of materials providing similar thermal expansion. In preferred embodiments the layers, referred to as super-lattice layers are about 4 nm to 20 nm thick. The layers of quantum well material is separated by much larger layers of thermal and electrical insulating material such that the volume of insulating material in each leg is at least 20 times larger than the volume of quantum well material.
申请公布号 US2011062420(A1) 申请公布日期 2011.03.17
申请号 US20100806359 申请日期 2010.08.11
申请人 HI-Z TECHNOLOGY INC 发明人 GHAMATY SAEID;ELSNER NORBERT B.;KUSHCH ALEKSANDR;KROMMENHOEK DANIEL J.;LEAVITT FREDERICK A.
分类号 H01L29/66;B82Y99/00 主分类号 H01L29/66
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