| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, capable of securing a high allowable value of current density of a metal wire in an ESD discharge path, and minimizing the wire resistance. SOLUTION: The semiconductor device includes: a signal pad (101); a power supply line (103); a grounding wire (104); an inductor (111) having one end connected to the signal pad (101); a terminal resistance (112) provided between the other end of the inductor (111) and the power supply line (103) or the grounding wire (104); a first ESD protective element (ESD_G) connected to a first position (Aa) in the middle of the inductor (111); and a second ESD protective element (ESD_V) connected to a second position (Ab) different from the first position (Aa) in the middle of the inductor (111). COPYRIGHT: (C)2011,JPO&INPIT |
