发明名称 Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers
摘要 A dual-chamber reactor can include a housing enclosing a volume having a divider therein, where the divider defines a first chamber and a second chamber. The divider can include a substrate holder that supports at least one substrate and exposes a first side of the substrate to the first chamber and a second side of the substrate to the second chamber. The first chamber can include an inlet for delivering at least one reagent to the first chamber for forming a film on the first side of the substrate, and the second chamber can include a removal device for removing material from the second side of the substrate.
申请公布号 US7902047(B2) 申请公布日期 2011.03.08
申请号 US20080180280 申请日期 2008.07.25
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY 发明人 KULKARNI NAGRAJ S.;KASICA RICHARD J.
分类号 H01L21/20;H01L21/36 主分类号 H01L21/20
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