发明名称 |
Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers |
摘要 |
A dual-chamber reactor can include a housing enclosing a volume having a divider therein, where the divider defines a first chamber and a second chamber. The divider can include a substrate holder that supports at least one substrate and exposes a first side of the substrate to the first chamber and a second side of the substrate to the second chamber. The first chamber can include an inlet for delivering at least one reagent to the first chamber for forming a film on the first side of the substrate, and the second chamber can include a removal device for removing material from the second side of the substrate.
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申请公布号 |
US7902047(B2) |
申请公布日期 |
2011.03.08 |
申请号 |
US20080180280 |
申请日期 |
2008.07.25 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY |
发明人 |
KULKARNI NAGRAJ S.;KASICA RICHARD J. |
分类号 |
H01L21/20;H01L21/36 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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