发明名称 |
METHOD FOR MANUFACTURING A LIGHT-EMITTING DIODE DEVICE FOR EMITTING LIGHT |
摘要 |
<p>The invention relates to the manufacture of an LED device, including: growing nanowire semiconductors (16) on a first electrode (14) produced on an insulating surface (10, 12), and encapsulating the latter in the planarization layer (18); forming, on the planarization layer (18), a second electrode (20) having contact take-up areas (22); forming LEDs (24) by: releasing a band of the first electrode around each take-up area (22), comprising: forming a mask for defining said bands on the second electrode (20); chemically etching the planarization layer, said etching being abutted so as to preserve the planarization layer; chemically etching the thus-released portion of the nanowires; and chemically etching the remaining planarization layer; and forming a trench (28) along each of said bands up to the insulating surface (10, 12); and placing the LEDs (24) in series by connecting the take-up areas (22) and the bands of the first electrode.</p> |
申请公布号 |
WO2011020959(A1) |
申请公布日期 |
2011.02.24 |
申请号 |
WO2010FR51553 |
申请日期 |
2010.07.22 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;GASSE, ADRIEN;GILET, PHILIPPE |
发明人 |
GASSE, ADRIEN;GILET, PHILIPPE |
分类号 |
H01L21/02;H01L27/15;H01L33/06;H01L33/64 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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