发明名称 |
Group III nitride crystal and method of its growth |
摘要 |
Affords group III nitride crystal growth methods enabling crystal to be grown in bulk by a liquid-phase technique. One such method of growing group III nitride crystal from solution is provided with: a step of preparing a substrate having a principal face and including at least on its principal-face side a group III nitride seed crystal having the same chemical composition as the group III nitride crystal, and whose average density of threading dislocations along the principal face being 5×106 cm−2 or less; and a step of bringing into contact with the principal face of the substrate a solution in which a nitrogen-containing gas is dissolved into a group III metal-containing solvent, to grow group III nitride crystal onto the principal face.
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申请公布号 |
US7892513(B2) |
申请公布日期 |
2011.02.22 |
申请号 |
US20090359342 |
申请日期 |
2009.01.26 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
FUJIWARA SHINSUKE;YOSHIDA HIROAKI;HIROTA RYU;UEMATSU KOJI;TANAKA HARUKO |
分类号 |
C01B21/06 |
主分类号 |
C01B21/06 |
代理机构 |
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