发明名称 |
Ausrichtung von Laserdioden auf fehlgeschnittenen Substraten |
摘要 |
A microelectronic assembly in which a semiconductor device structure is directionally positioned on an off-axis substrate. In an illustrative implementation, a laser diode is oriented on a GaN substrate wherein the GaN substrate includes a GaN (0001) surface off-cut from the <0001>direction predominantly towards either the <11 20> or the <1 100> family of directions. For a <11 20> off-cut substrate, a laser diode cavity may be oriented along the <1 100> direction parallel to lattice surface steps of the substrate in order to have a cleaved laser facet that is orthogonal to the surface lattice steps. For a <1 100> off-cut substrate, the laser diode cavity may be oriented along the <1 100> direction orthogonal to lattice surface steps of the substrate in order to provide a cleaved laser facet that is aligned with the surface lattice steps. |
申请公布号 |
DE112006001847(B4) |
申请公布日期 |
2011.02.17 |
申请号 |
DE20061101847T |
申请日期 |
2006.06.27 |
申请人 |
CREE INC. |
发明人 |
BRANDES, GEORGE R.;VAUDO, ROBERT P.;XU, XUEPING |
分类号 |
H01S5/10;H01S5/323 |
主分类号 |
H01S5/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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