| 摘要 |
<p>Prior to a film formation treatment of forming a thin film comprising tungsten selectively on an electrically conductive layer that is exposed on a via hole (33) formed on an insulating layer (32), a pretreatment of etching the surface of the electrically conductive layer is carried out. When the electrically conductive layer comprises any one compound selected from titanium nitride, tantalum nitride, vanadium nitride and tungsten nitride, an etching gas comprising a hydrogen gas and a nitrogen gas is used. When the electrically conductive layer comprises any one compound selected from tungsten, titanium, tantalum, vanadium, titanium tungsten, nickel, cobalt, titanium silicide, tungsten silicide, tantalum silicide, cobalt silicide and nickel silicide, an etching gas comprising a fluorine gas and an argon gas is used.</p> |
