| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of generating a negative voltage of high precision in a programmable manner. SOLUTION: A negative voltage detection circuit which controls an output voltage VPW of a negative voltage generation device includes a changeover switch TG for changing detection values of a negative voltage, and a correction switch TB. The correction switch has the same constitution with the changeover switch, and is held in an ON state. Thus, an influence of ON resistance of the changeover switch can be canceled. Consequently, the negative voltage of high precision can be generated in the programmable manner. COPYRIGHT: (C)2011,JPO&INPIT |
