| 摘要 |
Provided is a ZnO-based thin film which is doped with p-type impurities and which can be used for various devices. An MgxZn1-xO film (0≦̸x≦̸0.5) is formed on top of a substrate so as to have an acceptor concentration of a p-type dopant that is 5×1020 cm−3 or less. An acceptor concentration exceeding 5×1020 cm−3 results in the formation of a mixed crystal of the p-type impurities and the ZnO crystal as the base material. Accordingly, no high-quality ZnO-based thin film doped to be p-type can be obtained. This fact is testified by the change observed in the ZnO secondary ion intensity.
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