| 摘要 |
PURPOSE: A method of manufacturing a semiconductor device is provided to suppress dishing in CMP process by using the difference of polishing selection ratio. CONSTITUTION: An interlayer insulating film(102) is formed on a semiconductor substrate(100). An insulating layer(106) having a contact hole in the upper part of interlayer insulating film is formed. A barrier film(108) is formed on the insulating layer including the contact hole. A plug material film(110) is formed in order to fill the contact hole in the barrier film. A CMP of the plug material film is performed until the barrier film is exposed to outside.
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