<p>A method of forming a resist pattern on a silicon semiconductor substrate having an anti-reflective layer thereon is described. The method includes the steps of a) modifying surface energy of the anti-reflective surface with a chemical treatment composition, b) applying a UV etch resist to the treated anti -reflective surface, and c) exposing the anti-reflective surface to a wet chemical etchant composition to remove exposed areas of the anti -reflective surface. Thereafter, the substrate can be metallized to provide a conductor pattern. The method may be used to produce silicon solar cells.</p>
申请公布号
WO2011014281(A1)
申请公布日期
2011.02.03
申请号
WO2010US32658
申请日期
2010.04.28
申请人
MACDERMID, INCORPORATED;LETIZE, ADAM;KROL, ANDREW, M.;LONG, ERNEST;CASTALDI, STEVEN, A.
发明人
LETIZE, ADAM;KROL, ANDREW, M.;LONG, ERNEST;CASTALDI, STEVEN, A.