| 摘要 |
A semiconductor pressure sensor includes a single crystal silicon substrate, a diaphragm, four diaphragm side walls enclosing the diaphragm, and a bridge circuit. The diaphragm is formed in the silicon substrate by etching the silicon substrate from a lower surface side of the silicon substrate. The diaphragm has a (110) plane orientation and a substantially parallelogram shape. The four diaphragm side walls have a (111) plane orientation and form two pairs of substantially parallel and opposite surfaces. The bridge circuit is formed on an upper surface of the silicon substrate. The bridge circuit includes a lead conductor and a strain gauge resistor. The bridge circuit is configured to detect pressure applied to the pressure sensor based on a change in an output value of the bridge circuit corresponding to an amount of flexure produced in the diaphragm by the pressure.
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