| 摘要 |
PROBLEM TO BE SOLVED: To reduce consumption of the material of a sealing film in the manufacturing of a semiconductor device having columnar electrodes and the sealing film which covers around the columnar electrodes.SOLUTION: Upper part of a columnar electrode 10 formed by electrolytic plating of copper is not flat but has a dome shape, and the height of the dome shape is about 30 μm. The height of the columnar electrode 10 has a maximum variation of about 40 μm caused by abnormal growth in plating, or the like. Consequently, the columnar electrode 10 of maximum height has the final height of about +30+40 μm. Subsequently, the upper part of the columnar electrode 10 is cut by means of the byte 29 of a surface planer 27 thus arranging the height of the columnar electrodes 10. With such a method, consumption of the material of a sealing film covering around the columnar electrodes 10 can be reduced. |
