Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content.
申请公布号
US2011015329(A1)
申请公布日期
2011.01.20
申请号
US20100837873
申请日期
2010.07.16
申请人
MEMC SINGAPORE PTE. LTD. (UEN200614794D)
发明人
PHILLIPS RICHARD J.;KIMBEL STEVEN L.;DESHPANDE ADITYA J.;SHI GANG