| 摘要 |
<p>PURPOSE: A method for verifying optical proximity correction is provided to obtain the margin of a photo-lithography process by eliminating unnecessary pattern generated after an optical proximity correction operation. CONSTITUTION: A non-overlapped pattern with respect to the database pattern of a taped out semiconductor design is separated after an optical proximity correction verification with respect to the database pattern is completed. Each area of the non-overlapped pattern is calculated. A job pattern is a violated pattern based on mask-rule-check and is separated from the non-overlapped pattern. The job pattern is eliminated from the database pattern.</p> |
