发明名称 |
Methods of fabricating non-volatile memory devices |
摘要 |
A method of fabricating a semiconductor device includes forming a fin-shaped active region including opposing sidewalls and a surface therebetween protruding from a substrate, forming a gate structure on the surface of the active region, and performing an ion implantation process to form source/drain regions in the active region at opposite sides of the gate structure. The source/drain regions respectively include a first impurity region in the surface of the active region and second impurity regions in the opposing sidewalls of the active region. The first impurity region has a doping concentration that is greater than that of the second impurity regions. Related devices are also discussed.
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申请公布号 |
US7867883(B2) |
申请公布日期 |
2011.01.11 |
申请号 |
US20080146653 |
申请日期 |
2008.06.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHANG-HYUN;CHOI JUNG-DAL;KANG CHANG-SEOK;PARK JIN-TAEK;CHOE BYEONG-IN |
分类号 |
H01L21/425;H01L29/06 |
主分类号 |
H01L21/425 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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