| 摘要 |
PURPOSE: The fuse of a semiconductor device and a method for forming the same are provided to prevent the generation of blowing damages on a peripheral fuse by regulating the widths and the thicknesses of the fuse. CONSTITUTION: A lower anti-reflective film(33) is formed on an interlayer insulating film(31). A metal layer(35) is formed on the lower anti-reflective film. An upper anti-reflective film is formed on the metal layer. The interlayer insulating film is etched to form a bare fuse. Passivation films(45, 47) are formed on the surface of the bare fuse. The upper and the lower anti-reflective films contain one selected from a group including Ti, Ti/TiN, or TiN.
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