发明名称 |
CONTACT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
Embodiments of the invention include a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. A contact disposed on the p-type region includes a transparent conductive material in direct contact with the p-type region, a reflective metal layer, and a transparent insulating material disposed between the transparent conductive layer and the reflective metal layer. In a plurality of openings in the transparent insulating material, the transparent conductive material is in direct contact with the reflective metal layer. |
申请公布号 |
WO2010150114(A2) |
申请公布日期 |
2010.12.29 |
申请号 |
WO2010IB52277 |
申请日期 |
2010.05.21 |
申请人 |
PHILIPS LUMILEDS LIGHTING COMPANY, LLC;KONINKLIJKE PHILIPS ELECTRONICS N.V.;EPLER, JOHN E.;DAVID, AURELIEN J.F. |
发明人 |
EPLER, JOHN E.;DAVID, AURELIEN J.F. |
分类号 |
H01L33/40 |
主分类号 |
H01L33/40 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|