CAPACITOR OF SEMICONDUCTOR AND MANUFACTURING METHOD FOR THE SAME

摘要

PURPOSE: The capacitor of the semiconductor device and a method of formation thereof exhibits the capacitor forming method of the semiconductor device controlling the characteristic deterioration of the dielectric layer by the reduction reaction in the top electrode deposition. CONSTITUTION: The metal bottom electrode is formed on the semiconductor substrate. The dielectric layer is formed on the bottom electrode including the zirconium oxide layer. The top electrode layer is formed on the dielectric layer including the zirconium nitride layer. The tantalum nitride layer(530) is evaporated to approximately, 150Å to 500Å thickness.