| 摘要 |
The present invention provides an apparatus and a method for manufacturing a polycrystalline silicon thin film. The apparatus for manufacturing a polycrystalline silicon thin film comprises: a chamber; a substrate stage arranged at one side of the chamber such that a substrate with an amorphous silicon thin film and a conductive thin film is loaded onto the substrate stage; and a power applying electrode arranged at the other side of the chamber such that the power-applying electrode faces the substrate stage, and moves toward the substrate loaded onto the substrate stage to apply power to the conductive thin film of the substrate. Here, the power-applying electrode applies power to the conductive thin film to generate joule heat, and crystallizes the amorphous silicon thin film through the thus-generated joule heat. In addition, the apparatus for manufacturing a polycrystalline silicon thin film comprises: a chamber; a substrate stage arranged at one side of the chamber such that a substrate with an amorphous silicon thin film and a conductive thin film is loaded onto the substrate stage; and a power-applying electrode arranged at the other side of the chamber such that the power-applying electrode faces the substrate stage, and applies power to the conductive thin film of the substrate. Here, the substrate stage moves toward the power-applying electrode such that the conductive thin film of the substrate loaded onto the substrate stage is brought into contact with the power-applying electrode. Then, the power-applying electrode applies power to the conductive thin film to generate joule heat, and crystallizes the amorphous silicon thin film through the thus-generated joule heat. |
