发明名称 |
DIPPING SOLUTION FOR USE IN PRODUCTION OF SILICEOUS FILM AND PROCESS FOR PRODUCING SILICEOUS FILM USING THE DIPPING SOLUTION |
摘要 |
This invention relates to a dipping solution used in a process for producing a siliceous film. The present invention provides a dipping solution and a siliceous film-production process employing the solution. The dipping solution enables to form a homogeneous siliceous film even in concave portions of a substrate having concave portions and convex portions. The substrate is coated with a polysilazane composition, and then dipped in the solution before fire. The dipping solution comprises hydrogen peroxide, a foam-deposit inhibitor, and a solvent. |
申请公布号 |
EP2264744(A1) |
申请公布日期 |
2010.12.22 |
申请号 |
EP20090716895 |
申请日期 |
2009.03.03 |
申请人 |
AZ ELECTRONIC MATERIALS (JAPAN) K.K.;AZ ELECTRONIC MATERIALS USA CORP. |
发明人 |
HAYASHI, MASANOBU |
分类号 |
H01L21/316;B05D3/10;C09D183/16;H01L21/76 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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