| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a group III nitride semiconductor element having superior device characteristics. <P>SOLUTION: The method of manufacturing a group III nitride semiconductor element is a method of laminating a buffer layer comprising a group III nitride compound and a base layer on a substrate; the buffer layer is formed of AlN; the film thickness of the buffer layer is in the range of 10-500 nm; the lattice constant of the a-axis of the buffer layer is smaller than the lattice constant of the a-axis of AlN in a bulk state; the lattice constant of the buffer layer satisfies relation indicated by formula (1), the buffer layer is formed by activating a gas containing a group V element and a metal material by plasma and making them react; and the base layer includes GaN and is provided, in contact with the buffer layer. (c<SB>0</SB>-c)/(a<SB>0</SB>-a)≥-1.4...(1) provided that, in the formula (1), c<SB>0</SB>is the lattice constant of the c-axis of AlN in bulk, c is the lattice constant of the c-axis of the buffer layer, the a<SB>0</SB>is the lattice constant of the a-axis of AlN in bulk, and a is the lattice constant of the a-axis of the buffer layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
