| 摘要 |
PROBLEM TO BE SOLVED: To prevent a substrate surface from swelling in laser annealing of an amorphous silicon layer on a glass substrate. SOLUTION: In a method for forming a polycrystalline silicon layer on the glass substrate, a thin film layer is formed on the glass substrate 50 by preheating the glass substrate 50, depositing an amorphous silicon precursor layer on the substrate at a primary temperature, and annealing the substrate in thermal processing chambers 52, 54, 56, 58 at a secondary temperature sufficiently higher than the primary temperature to substantially reduce hydrogen concentration in the precursor layer. Preheating and annealing steps can be performed in the same thermal processing chambers 52, 54, 56, 58. Then the precursor layer is converted to the polycrystalline silicon layer by laser annealing. COPYRIGHT: (C)2011,JPO&INPIT
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