MAGNETIC MEMORY ELEMENT AND STORAGE DEVICE USING SAME

摘要

Disclosed is a magnetic memory element capable of maintaining high heat stability (retention characteristics) even while reducing the write current. The magnetic memory element is provided with a magnetic tunnel junction section (13) and a thermal expansion layer (28) inserted at the magnetic tunnel junction section (13). The magnetic tunnel junction section (13) is comprised of a first magnetic body (22) which includes a vertically magnetized film, an insulating layer (21), and a second magnetic body (20) as a storage layer which includes a vertically magnetized film, said first magnetic body (22), insulating layer (21), and second magnetic body (20) being stacked in that order. The thermal expansion of the thermal expansion layer (28) that occurs with the running of electric current causes the second magnetic body (22) to be deformed in a direction in which the lateral cross section of the second magnetic body (22) will increase, and thereby reduces the switching current threshold required for changing the magnetization direction.