| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device stably operable with high sensitivity even when the solid-state imaging device is microfabricated and increased in speed. <P>SOLUTION: Adjacent photoelectric conversion units 11 in pixel sections 10 arranged in an array form, and the photoelectric conversion unit 11 and an amplifying transistor 14 are respectively isolated from each other by an insulating isolation section 22. The insulating isolation section 22 has a first region A in which the amplifying transistor 14 is not arranged between the photoelectric conversion units 11, and a second region B in which the amplifying transistor 14 is arranged between the photoelectric conversion units 11. A first isolation diffusion layer 23 with low density is formed below the insulating isolation section 22 of the first region A, and a second isolation diffusion layer 24 with high density and the first isolation diffusion layer 23 with low density are formed below insulating isolation sections 22 of the second region B. A source/drain region of the amplifying transistor 14 in the second region B is formed in a well region 25 formed simultaneously with the second isolation diffusion layer 24. <P>COPYRIGHT: (C)2011,JPO&INPIT |
