| 摘要 |
<p>A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (Al X In Y Ga (1-X-Y ) 2 O 3 where 0‰¦x‰¦1, 0‰¦y‰¦1 and 0‰¦x+y‰¦1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.</p> |
