| 摘要 |
A power transistor (210) comprises a plurality of unit cell devices (212), a base contact configuration, an emitter contact configuration, and a collector contact configuration. The plurality of unit cell devices is arranged along an axis (194), each unit cell device including base (80), emitter (82), and collector (84) portions. The base contact configuration includes (i) a first base feed (150) coupled to the base portion of each unit cell device via a first end of at least one base finger (154) associated with a corresponding unit cell device and (ii) a second base feed (152) coupled to the base portion of each unit cell device via an opposite end of the at least one base finger associated with the corresponding unit cell device. The emitter contact configuration includes (i) a first emitter feed (172) coupled to the emitter portion of each unit cell device via a first end of an emitter metallization (176) associated with a corresponding unit cell device and (ii) a second emitter feed (174) coupled to the emitter portion of each unit cell device via an opposite end of the emitter metallization associated with the corresponding unit cell device. The collector contact configuration includes a collector feed (188) coupled to the collector portion of each unit cell device.
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