EPITAXIAL SUBSTRATE, SEMICONDUCTOR ELEMENT STRUCTURE, AND PRODUCTION METHOD OF THE EPITAXIAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial substrate having a small internal electric field and excellent flatness, and to provide a device using the substrate.

SOLUTION: The epitaxial substrate is obtained through steps of: preparing a sapphire single crystal base 1 having the inclination angle of the surface of the base 1 ranging from -25° to -15°, wherein the inclination angle of the surface of the base 1 with respect to an R-plane is defined in such a manner that the angle is in a positive value when the surface of the base 1 gets away from the C-plane and that the angle is in a negative when the surface of the base 1 approaches the C-plane; and depositing a substrate surface layer comprising AlxGa1-xN (0COPYRIGHT: (C)2011,JPO&INPIT