| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric converting element which is excellent in photoelectric converting efficiency. <P>SOLUTION: In the photoelectric converting element 1, a lower electrode 20, a compound semiconductor-based photoelectric converting layer 30, and an upper electrode layer 40 are sequentially laminated at least at one of both side of an AI raw material 11 of a metal substrate 14 having the AI raw material 11 on at least one surface on an anodic substrate 10 where an anodic electrode oxide film 12 of the Al raw material 11 is formed as an electric insulating layer. The main component of the photoelectric converting layer 30 is a compound semiconductor having at least one of a chalcopyrite structures which comprises elements of Ib, IIIb, and VIb groups. At least one of alkali feeding layers 60 is formed between the anodic electrode oxide substrate 10 and the lower electrode 20. Furthermore, at least one of insulating diffusion preventing layers 70 which prevents the diffusion of alkali metal and/or alkali earth metal elements to the side of the anodic electrode substrate 10 is provided between the anodic oxide substrate 10 and the alkali feeding layer 60. <P>COPYRIGHT: (C)2011,JPO&INPIT |
