发明名称 Method for manufacturing electron-emitting device
摘要 There is provided an electron-emitting device of a field emission type, with which the spot size of an electron beam is small, an electron emission area is large, highly efficient electron emission is possible with a low voltage, and the manufacturing process is easy. The electron-emitting device includes a layer 2 which is electrically connected to a cathode electrode 5, and a plurality of particles 3 which contains a material having a resistivity lower than that of a material constituting the layer 2, and is wherein a density of particles 3 in the layer 2 is 1×1014/cm3 or more and 5×1018/cm3 or less.
申请公布号 US7811625(B2) 申请公布日期 2010.10.12
申请号 US20070937610 申请日期 2007.11.09
申请人 CANON KABUSHIKI KAISHA 发明人 ICHIKAWA TAKESHI;FUJIWARA RYOJI;SASAGURI DAISUKE
分类号 B05D5/12;B05D3/02;C23C14/14;H01J1/304;H01J9/02;H01J29/04;H01J31/12 主分类号 B05D5/12
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