SOLID-STATE IMAGING DEVICE, AND IMAGING DEVICE

摘要

PROBLEM TO BE SOLVED: To balance between provision of a sufficient hole accumulation layer and reduction in dark current.

SOLUTION: This solid-state imaging device 1 includes a light reception portion 12 which performs photoelectric conversion of incident light. The solid-state imaging device includes a film 21 formed on a light reception surface 12s of the light reception portion 12 for lowering the interface level, and a film 22 formed on the film 21 for lowering the interface level and having negative fixed charge. In the solid state imaging device, a hole accumulation layer 23 is formed on the light reception surface 12s side of the light reception portion 12; a peripheral circuit portion 14 formed with a peripheral circuit on a side of the light reception portion 12 is provided; and insulation films 21, 24 are formed between a surface of the peripheral circuit portion 14 and the film 22 having the negative fixed charge to set the distance of the film 22 having the negative fixed charge from the surface of the peripheral circuit portion 14 larger than that from the surface of the light reception portion 12.

COPYRIGHT: (C)2011,JPO&INPIT