| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a field-effect transistor whose gate insulating layer and channel layer exhibit proper adhesion. Ž<P>SOLUTION: The field-effect transistor has a substrate, and a gate electrode, a gate insulating layer, a channel layer, a source electrode and a drain electrode on the substrate, the gate insulating layer includes gallium oxide, and the channel layer is an organic semiconductor layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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