| 摘要 |
A semiconductor device has one or more semiconductor chips with active and passive surfaces, wherein the active surfaces include contact pads. The device further has a plurality of metal segments separated from the chip by gaps; the segments have first and second surfaces, wherein the second surfaces are coplanar with the passive chip surface. Conductive connectors span from the chip contact pads to the respective first segment surface. Polymeric encapsulation compound covers the active chip surface, the connectors, and the first segment surfaces, and are filling the gaps so that the compound forms surfaces coplanar with the passive chip surface and the second segment surfaces. In this structure, the device thickness may be only about 250μm. Reflow metals may be on the passive chip surface and the second segment surfaces.
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