| 摘要 |
PURPOSE: An offset device and a memory device having the offset device are provided to increase the data read margin by forcibly increasing the potential of a bit line as much as a certain level in the data read operation. CONSTITUTION: A dummy cell array increases the potential of a bit line as much as the predetermined certain level in an active state of the dummy word line. A dummy precharge unit(320) precharges the dummy cell array according to a first dummy precharge signal. A dummy separator(330) selectively separates the dummy cell array from the main cell array for storing the data according to a second precharge signal. |
