发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR LASER ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor laser element, which can improve a yield, and can manufacture efficiently the laser element of stable quality. SOLUTION: The method of manufacturing the nitride semiconductor laser element is the method of manufacturing the semiconductor laser element having a semiconductor laminate on a substrate, and includes: a step of forming the semiconductor laminate on the substrate; a step of forming an auxiliary groove having the first area, the second area with a depth deeper than that of the first area and the third area with a depth shallower than that of the first area, from an end face side of a resonator, in this order, along a resonator direction of a laser element forming area on a surface of the semiconductor laminate; and a step of dividing the substrate and the semiconductor laminate, using the auxiliary groove. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010199139(A) 申请公布日期 2010.09.09
申请号 JP20090039372 申请日期 2009.02.23
申请人 NICHIA CORP 发明人 MORIZUMI TOMONORI
分类号 H01S5/343;H01S5/22 主分类号 H01S5/343
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