发明名称 METHOD FOR SEMICONDUCTOR SOLIDIFICATION WITH ADDITION OF DOPED SEMICONDUCTOR CHARGES DURING CRYSTALLIZATION
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for semiconductor solidification. <P>SOLUTION: The method for semiconductor solidification includes steps for: forming a bath of molten semiconductor 103 from a first charge 120 of semiconductor which includes dopants; and solidifying the molten semiconductor 103, and in addition includes, during solidification, the implementation of one or more steps for the addition of supplementary charges 120 of semiconductor, which also contains dopants, to the bath of molten semiconductor 103. The supplementary charges 120 of semiconductor are in solid or liquid form. Further, electron acceptor dopants are atoms of boron and electron donor dopants are atoms of phosphorus. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010189253(A) 申请公布日期 2010.09.02
申请号 JP20100000236 申请日期 2010.01.04
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE & AUX ENERGIES ALTERNATIVES 发明人 SERVANT FLORENCE;CAMEL DENIS
分类号 C30B11/06;C01B33/02;H01L31/04 主分类号 C30B11/06
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