发明名称 IMPROVED LED STRUCTURE
摘要 <p>A light emitting device, a wafer for making the same, and method for fabricating the same are disclosed. The device and wafer include a first layer of a first conductivity type, an active layer, and a layer of a second conductivity type. The active layer overlies the first layer, the active layer generating light. The second layer overlies the active layer, the second layer having a first surface in contact adjacent to the active layer and a second surface having a surface that includes features that scatter light striking the second surface. A layer of transparent electrically conducting material is adjacent to the second surface and covered by a first layer of a dielectric material that is transparent to the light generated by the active layer. A mirror layer that has a reflectivity greater than 90 percent is deposited on the first layer of dielectric material.</p>
申请公布号 KR20100091207(A) 申请公布日期 2010.08.18
申请号 KR20107012090 申请日期 2008.11.04
申请人 BRIDGELUX, INC. 发明人 HASNAIN GHULAM;LESTER STEVEN D.
分类号 H01L33/24;H01L33/22;H01L33/38;H01L33/44;H01L33/46 主分类号 H01L33/24
代理机构 代理人
主权项
地址