发明名称 |
Silicon-on-insulator semiconductor device with silicon layers having different crystal orientations and method of forming the silicon-on-insulator semiconductor device |
摘要 |
A semiconductor device comprising a substrate having a first crystal orientation and an insulating layer overlying the substrate is provided. A plurality of silicon layers are formed overlying the insulating layer. A first silicon layer comprises silicon having the first crystal orientation and a second silicon layer comprises silicon having a second crystal orientation. In addition, a method of forming a semiconductor device providing a silicon-on-insulator structure comprising a substrate with a silicon layer overlying the substrate and a first insulating layer interposed therebetween is provided. An opening is formed in a first region of the silicon-on-insulator structure by removing a portion of the silicon layer and the first insulating layer to expose a portion of the substrate layer. Selective epitaxial silicon is grown in the opening. A second insulating layer is formed in the silicon grown in the opening to provide an insulating layer between the grown silicon in the opening and the substrate.
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申请公布号 |
US7235433(B2) |
申请公布日期 |
2007.06.26 |
申请号 |
US20040976780 |
申请日期 |
2004.11.01 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WAITE ANDREW M.;CHEEK JON |
分类号 |
H01L21/84 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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