| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide technology for improving variations in film quality in a sputtering method and producing a boride film with good crystallinity, to provide technology for forming a boride film having homogeneous film quality (crystallinity) on a substrate having a large area, to provide a method for producing an electron emitting device excellent in electron emission characteristics (particularly, in stability of the electron emission), and further, to improve reduction of the film forming energy due to disposition of a shielding member, by employing a simple configuration. <P>SOLUTION: A boride film is deposited on a substrate by a sputtering process through an opening of a shield member, while the substrate, a boride target and the shielding member having the opening are disposed in such a manner that the substrate and the target oppose to each other and that the shield member is placed between the substrate and the target. The shield member is arranged so as to shield between an erosion region of the target and the substrate. A distribution of plasma density in a space between the substrate and the target is set in such a manner that a plasma density in a region in which the opening is located becomes higher than a plasma density in a region shielded by the shield member. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
