| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma sputtering device by which a uniform film can be obtained. <P>SOLUTION: The invention provides the uniform densities of ions and radicals in a radial direction in the vicinity of a target plate to create a uniform sputtering speed over the radial line of the target plate. A plasma treatment apparatus is composed of a reaction vessel 11 including an upper electrode 12, a lower electrode 13, and the target plate 14 fixed to the upper electrode. A substrate 15 is mounted on the lower electrode. The apparatus is further provided with a high-frequency power source 16 which is connected to the upper electrode and operates in the region of HF or VHF, and a plasma shield ring 20 in which a secondary plasma is generated in the front of its internal surface between the upper and lower electrodes. Based on a combined plasma of the initial and secondary ones, the radially-uniform ion density and radical density are created on the downside of the target plate. <P>COPYRIGHT: (C)2010,JPO&INPIT |
