| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a substrate for growing single crystal diamond capable of heteroepitaxially growing single crystal diamond of high crystallinity and being repeatedly usable, and a method for manufacturing single crystal diamond capable of manufacturing single crystal diamond having a large area and high crystallinity at a low cost. <P>SOLUTION: The substrate for growing single crystal diamond has at least a seed-substrate consisting of a single crystal and a thin film heteroepitaxially grown on the seed-substrate, which is characterized by using single crystal diamond as the seed-substrate and iridium film or rhodium film as the thin film. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
