Image sensor e.g. complementary metal-oxide-semiconductor sensor, has control circuit i.e. transistor, interrupting building-up of signal voltage in storage element when preset end voltage is achieved

摘要

The image sensor (100) has multiple sensor cells (P1-Pn) including light-sensitive photo elements i.e. photodiodes (D). A signal voltage is built-up in a storage element i.e. capacitor (C) and depends on light quantity falling on the photo element. A control circuit i.e. transistor (T), interrupts building-up of the signal voltage in the storage element when a preset end voltage is achieved, where the preset end voltage corresponds to actual value of a predetermined control voltage. The control voltage is varied such that predetermined distribution of the end voltage is achieved by the cells. An independent claim is also included for a method for generating images using sensor cells.