| 发明名称 |
Dry etching method, fine structure formation method, mold and mold fabrication method |
| 摘要 |
A substance including tungsten and carbon is etched by using plasma. The plasma is generated from a mixed gas of a gas including a fluorine atom and a gas including a CN bond and a hydrogen atom.
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| 申请公布号 |
US7758761(B2) |
申请公布日期 |
2010.07.20 |
| 申请号 |
US20060475173 |
申请日期 |
2006.06.27 |
| 申请人 |
PANASONIC CORPORATION |
发明人 |
NAKAGAWA HIDEO;SASAGO MASARU;MURAKAMI TOMOYASU |
| 分类号 |
B44C1/22 |
主分类号 |
B44C1/22 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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