METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of the semiconductor device is that the landing plug contact is formed in the active area upper part. The self aligned contact fail by connection between the bit line contact and the gate line is prevented. CONSTITUTION: An element isolation film is formed on the substrate(31). The element isolation film defines the active area(31B). The gate line(32) crossing the active area reduction is formed. The first insulating layer filling the gate line interval is formed in the top of the substrate. The mask pattern of the line type is formed on the element isolation film between active areas. The first insulating layer is etched and the landing plug contact hole is formed.