| 摘要 |
<p>PURPOSE: A method of manufacturing a semiconductor device is provided to form a punch blocking layer in lower part of neck part of pillar active in a semiconductor device, thereby preventing a punch-through between buried bit lines. CONSTITUTION: A first hard mask layer is formed on a semiconductor substrate(100). A first groove is formed by etching the first hard mask layer and semiconductor substrate. A punch blocking layer(106) is formed in a semiconductor substrate part which is lower part of the first groove. A second hard mask layer(108) within the first groove is buried. A plurality of second grooves is formed by etching the first hard mask layer.</p> |
